Optical sensor

Optical sensor

Si-Avalanche Photodiode

Si-Avalanche Photodiode

Product name

Si-Avalanche Photodiode

Overview

Si avalanche photodiode (Si-APD) for optical detection of λ=635nm laser used in laser distance meters, etc. The surface-mount COB package and low bias support make it suitable for portable devices.
These Si-APDs are easy to use due to small temperature variation of breakdown voltage and variation of breakdown voltage.

Features

  • Small breakdown voltage variation : 100 V±15 V
  • Small temperature variation of breakdown voltage : 0.37 V/℃
  • Low required bias voltage : Typ. 100 V
  • Surface mount COB package is used.

Specifications

Photodetector diameter

200 μm
Custom shapes and dimensions available

Breakdown voltage (typ.)

100 V

Breakdown voltage range

85 V〜115 V

Temperature coefficient of breakdown voltage

0.37 V/℃

635nm Sensitivity @ M=100

34.4 A/W

Dark current @ M=100

0.08 nA

Pin-to-Pin Capacitance
@M=100, f=1MHz

0.64 pF

Wavelength range

400 nm-1100 nm

Applications

  • Laser Distance Meter, etc.

Status

Under development

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Note : Specifications may change without prior notice.